ATLAS SCT Detector QA Procedures

ATLAS SCT/Detector FDR/99-7

Updates
21/05/99 Introduce full strip test, modify bias resistance test
17/02/00 Add definition of electrical continuity in strip tests
28/11/00 Add recommended test procedures, move Full Strip Test to 'Detector Subset' test category. Change polarity in strip tests to match polarity used by Hamamatsu. Require high power optics in equipment list.
 

Contents

  1. Overview
  2. Actions by the Manufacturer
    1. Measurement tests
    2. Special requests to the manufacturer
    3. Data supplied to ATLAS institutes
  3. Actions by ATLAS Institutes
    1. Tests on every detector
      1. Visual inspection
      2. IV Curve
    2. Tests on a detector subset
      1. Detector depletion voltage
      2. Full strip test
      3. Leakage current stability
    3. Diagnostic Tests
      1. Interstrip capacitance
      2. Metal series resistance
      3. Implant sheet resistance
      4. Flatband voltage
      5. Wafer thickness
    4. Recommended Test Procedures
      1. General
      2. Tests on every detector
      3. Tests on a detector subset
    5. Obsolete Test Procedures
      1. Polysilicon bias resistance and interstrip resistance
      2. Coupling capacitance
      3. Standard strip test
  4. Equipment Required at ATLAS Institutes
  5. Database Entries
    1. Entries provided by the manufacturer
    2. Entries provided by the ATLAS Institute

      3.  

       
       
       
       
       
       
       
       


 

1.0 Overview

Following the process of qualification of a detector design from a particular manufacturer, it remains the responsibility of that manufacturer to ensure no changes in processing occur during production that may modify
  1. any parameters relevant to ATLAS specifications
  2. any pre- and post-irradiation electrical behaviour
from that observed during the qualification program. As consistency of processing is ensured by the manufacturer, the role of the ATLAS institutes during production testing is mainly that of a visual inspection and of an electrical IV measurement on every detector as a check on the basic quality. However, on a subset of detectors (expected to be 10-20% initially, but reducing to ~5% with experience during production), a thorough evaluation of detector (and test-structure where possible) characteristics will be performed as a check on processing consistency and as a verification of the manufacturers tests.

2.0 Actions by the manufacturer

2.1 Measurement Tests

The manufacturer is expected to perform sufficient checks to ensure consistency of processing and to maintain all electrical parameters within the ATLAS specifications. In addition, the manufacturer is expected to perform the following test measurements on every detector, and to supply the measurement results to ATLAS:
  1. IV up to 350V
  2. Strip oxide shorts with 100V across the strip oxide
  3. Strip metal breaks
  4. Strip metal shorts to neighbours
Detectors will only be supplied to ATLAS institutes if the results of all tests by the manufacturer are within ATLAS specifications.

2.2 Special requests to the manufacturer

  1. A unique identification number (1 to 99999) for each detector is to be marked on the detector identification pads. This will require in most cases a trivial modification to the strip test prober software.
  2. If possible the manufacturer should use Row C[1](barrel detectors) and  Row B[1] (wedge detectors) of the strip pads and bias contacts for probing tests, as these pads are not used during any stage of the module construction. However if this is too inconvenient due to standard procedures then the standard probing pattern is acceptable.
  3. Immediately after the check for strip oxide shorts with 100V across the strip oxide, we request that the strip metal is returned to ground potential in order to remove residual charge.
  4. If test-structures are being delivered as well as the baby detector, the latter should be supplied undiced on the test-structure quadrant with the manufacturer serial number clearly marked on the surface on an used part of the quadrant. If only the baby detector is supplied, we request that the packaging of the baby detector is clearly marked with the associated detector identification number.

2.3 Data supplied to the ATLAS Institutes

The following data should be provided by the manufacturer:
  1. The ATLAS serial number of the detector / baby detector
  2. The manufacturer serial number of the wafer
  3. Detector thickness
  4. Substrate origin
  5. Substrate orientation
  6. Substrate approximate resistivity (upper and lower limit)
  7. Leakage current at 150V bias
  8. Leakage current at 350V bias
  9. List of IV raw data to 350V
  10. Temperature of IV measurement
  11. List of oxide pinholes with at least 100V across the oxide
  12. List of strip metal discontinuities
  13. List of strip metal shorts to neighbours
  14. Depletion volts (usually measured by the manufacturer using a diode)
  15. Polysilicon bias resistance range (upper and lower limit)
The manufacturer is requested to upload the above data into the ATLAS database, or if necessary to supply the above data in the form of a text file (on PC formatted disk) to a pre-agreed format[2].

3.0 Actions by ATLAS Institutes

On delivery of a detector, the arrival of the shipment must be registered in the ATLAS database. Tests carried out by the ATLAS institutes and the acceptance criteria are listed below. Tests should be carried out in a temperature (21 +/- 2oC) and humidity (50+/-10%) controlled environment. Note that all probing of detector probe pads (strip pads and bias rail) should whenever possible use Row C[1] and  Row B[1] for barrel and wedge detectors respectively, as this is not used in any stage of the module construction.

3.1 Tests on every detector

3.1.1 Visual inspection.

Aim

To ensure the detector is free from physical defects and scratches.

Procedure

Place the detector on a probestation chuck and scan it visually using a microscope. See Section 3.4.2.

Acceptance

The detector is free from significant scratches and blemishes. The cut edge is straight and clean. No chips or cracks should extend inwards by more than 50um on either side of the detector.

3.1.2 IV Curve

Aim

To perform a basic check of detector quality, to cross-check with manufacturer data and to ensure there has been no transit damage.

Procedure

This test requires a voltage source/picoammeter (SMU). The detector backplane is placed on the chuck of a probestation and the IV characteristic between the bias rail and the backplane measured using the SMU. The detector bias may be applied via a front edge contact instead of via the detector backplane if appropriate. The current is measured every 10V step up to 500V, with a 10 second delay between steps. A current limit of 100uA is imposed throughout the measurement. The temperature of the probestation environment should be recorded.

Acceptance

The detector displays a characteristic at 20oC which is below 6uA at 150V and below 20uA at 350V, and agrees with the manufacturer's data within the agreed tolerance. The agreement tolerance is 1uA at both 150V and 350V for Hamamatsu detectors, and 2uA at 150V and 4uA at 350V for CiS detectors.

3.2 Tests on a detector subset

These tests are a verification of the measurements performed by the manufacturer. If any of these tests fail, this is an indication of either a variation in processing and/or a failure in the testing procedures of the manufacturer. Further samples from the batch should then be tested and contact made immediately with the manufacturer.

3.2.1 Detector depletion voltage

Aim

To determine the depletion voltage and verify the manufacturer data.

Procedure

This measurement requires a CV meter equipped (if necessary) with an external bias adapter and a voltage source. Place the detector backplane on the chuck of a probestation and contact the bias rail with a probeneedle. Connect the probeneedle to the AC output of the CV meter bias adapter, and the backplane to the voltage output of the CV meter bias adapter. Alternatively the capacitance can be measured between the bias rail and the front edge contact if appropriate. Record the capacitance in 10V steps up to 350V, with a 10 second delay between steps. Use 1 kHz with CR in SERIES. Plot the data as 1/C**2 (1/nF**2) vs bias (volts), and extract the depletion voltage.

Acceptance

Depletion < 150V
 

3.2.2 Full Strip Test

Aim

To measure the polysilicon bias resistance and coupling capacitance for every strip, and to check for pinholes, strip metal shorts and opens, and electrical contact between the polysilicon resistor and strip implant.

Procedure

This test requires all 768 strips to be probed while the detector is partially depleted via contacts to the bias rail and backplane. The test requires a voltage source to deplete the detector, a voltmeter/picoammeter (SMU) to check for pinholes, a CV meter for a CR calculation, and a switching matrix. Either mount the detector into a frame and bond the bias rail and backplane to soldable contacts, or, if a probeneedle manipulator can be fixed to the moving chuck, place the detector directly on to the chuck and contact the detector bias rail with the chuck-mounted probeneedle. If the option of mounting the detector into a frame is used, attach the frame to the probestation chuck using a jig which permits adjustment of the planarity of the detector so that it is flat with respect to the platen of the probestation.

Switch off the light and apply +20V to the detector backplane with the bias rail at ground potential in order to partially deplete the detector. Under computer control, probe all 768 strip pads along Row C (barrels) or Row B (wedges) according to the following instructions.

  1. Switch the high output of the SMU (sourcing 0V) to the probeneedle via a ~10Mohm series resistor, and switch the low output of the SMU to the detector bias rail.
  2. Step to strip n and raise the chuck
  3. Increase the SMU source to +10V, wait 1 second and measure the current to determine electrical continuity across the oxide. If the current exceeds 50nA (which defines the existence of a pinhole at low volts) skip steps 4 and 5 and go to step 6.
  4. If the measured current is less than 50nA, increase the SMU source to +100V (no ramp), wait 1 second and recheck the current.
  5. Decrease the SMU source to 0V (no ramp)
  6. Switch the probeneedle to ground (ie short the needle to the detector backplane) and wait for 500ms
  7. Switch the probeneedle to the AC source output of the CV meter, and the bias rail to the voltage source output of the CV meter, with the CV meter sourcing 0V.
  8. Wait 1 second and measure C and R (at 100Hz, with CR modelled in SERIES)
  9. Lower the chuck
  10. Repeat the measurement cycle from point 1 above for strip n+1.
The test (as demonstrated on a SUMMIT 10K probestation) takes about 1 hour 20 minutes. The measured values of R and C yield the polysilicon resistor value and coupling capacitance respectively. Deviations imply a strip defect as listed above. Note the test may be performed at 1kHz if measurements at 100Hz are not possible or are unstable; at 1kHz the coupling capacitance is underestimated by 10-20%.

Acceptance

1. We require <2% defective strips, where a defective strip is defined by any of the following:


2. We require that the total number of PINHOLES, OXIDE-PUNCHTHROUGHS, SHORTS and OPENS differently identified by the institute and manufacturer is less than 3.

3.2.3 Leakage Current Stability

Aim

To check that any variation in leakage current over a 24 hour period is within specifications.

Procedure

This test requires a voltage source / picoammeter (SMU), a meter for temperature monitoring, an environment chamber, and, if available, a switching matrix. Detector is assembled into a support frame and the backplane and bias rail are bonded to soldable contacts. The backplane and bias rail of the detector are connected to the high and grounded-low outputs of the SMU respectively. The assembly is installed in an environment chamber containing dry air (nitrogen) maintained at 20oC. The bias is ramped to 150V, and after 60 seconds settling time the current is monitored every 15 minutes over a 24 hour period. Several detectors may be measured in parallel by use of a switching matrix.

Acceptance

Maximum increase in leakage current during 24 hours is less than 2uA.

3.3 Diagnostic Tests

This section lists the recommended procedures for a more detailed evaluation of detector electrical parameters should acceptance tests indicate that some variation in processing has occurred. In addition, the interstrip capacitance and
strip metal resistance should be routinely checked on a small sample (~1%) of detectors.After any diagnostic tests on the detector, the IV measurement listed in Section 3.2.1 should be repeated.

3.3.1 Interstrip Capacitance

Aim

To ensure the interstrip capacitance is within specifications.

Procedure

This test requires a CV meter and a voltage source. Place the detector on the chuck of a probestation, and contact the bias rail by probe needle. The backplane and the bias rail should be connected to the high and grounded-low sides (respectively) of the voltage source. Contact three adjacent metal strips (pad row C for barrels, pad row B for wedges) with probe needles. Contact the central strip to the AC output of the CV meter, and the the neighbours to the voltage output (with the CV meter soucing 0V). Measure the capacitance between the central strip and its neighbours on both sides as a function of detector bias up to 150V. Use 100 kHz test frequency with CR in parallel.

Acceptance

Interstrip capacitance < 1.0 pF/cm at 150V bias.
 

3.3.2 Metal Series Resistance

Aim

To determine that the strip metal resistance is within specifications (deposited metal is sufficiently thick) and to monitor processing consistency.

Procedure

This test requires an ohmmeter or a voltage source / picoammeter (SMU). Apply an ohmmeter (or perform an IVusing the SMU) between the two ends of the appropriate metal line test-structure (if available) or to either end of one of the detector metal strips (if no test-structure available).

Acceptance

Series resistance < 15 ohm/cm
 

3.3.3 Implant sheet resistance

Aim

Measurement of sheet resistance of p implant, to check that the value is within specifications and to monitor processing consistency.

Procedure

This test requires an ohmmeter or a voltage source / picoammeter (SMU), and requires the use of the appropriate test-structure if available. Contact the ohmmeter (or perform an IV using the SMU) between the two contacts of the sheet resistor test-structure.

Acceptance

Sheet resistance < 200 Kohm/cm

3.3.4 Flat band voltage

Aim

To determine flat band voltage as a monitor of processing consistency.

Procedure

This test requires a voltage source, and a CV meter equipped (if necessary) with an external bias adapter. The measurement requires a MOS test-structure if available. Place the MOS on a probestation chuck and contact the MOS with a probe needle. Connect the MOS metal and the backplane to the AC and voltage outputs (respectively) of the CV meter. Measure capacitance across the MOS (at 1kHz with CR in SERIES) as a function of bias up to 50V.

Acceptance

There is no defined acceptance criteria. Flat band voltage is used as a monitor of processing consistency.
 

3.3.5 Wafer Thickness

Aim

To verify manufacturer's thickness declaration.

Procedure

Using a miniature detector, or a wafer segment if available, use a digital micrometer with 1um resolution. Note this is a destructive test.

Acceptance

Agreement with manufacturer data, within 5um.

3.4 Recommended Test Procedures

3.4.1 General

To minimize the risk of error, the following general procedures are recommended during testing:
  1. Always use a barcode reader to enter the serial number, prior to any test.
  2. Verify that the detector is registered and "owned" by your institute before commencing any test. This can be completely automated in the Labview DAQ program using a lookup table generated from OMNIS or by the web. Regenerate the lookup table every time detectors are received or sent in a shipment.
  3. File management (generation and backup of raw data files, database upload files etc) should be invisible to the user, without requiring manual intervention.
  4. Upload the database files to the database routinely at the end of each day. The java upload program ensures automated file removal if the upload is successful, requiring zero manual intervention
  5. Keep track locally of which detector has undergone which test. An excel spreadsheet with serial numbers derived from OMNIS or the web is ideal.

3.4.2 Tests on every Detector

In addition to the IV scan, we require a full visual scan of the detector, paying particular attention to the condition of the cut edge and the bias resistors. The visual scans should ideally be automated (XY of either the stage or microscope is controlled programmatically by PC) to ensure 100% coverage. Alternatively manual scanning can be performed if adequate care is taken to ensure that all the detector is scanned (eg by taking note of strip numbers throughout the scan). Note the following procedures assume detector packaging used by Hamamatsu, and similar procedures should apply for non-Hamamatsu packaging.
 
  1. Remove detector from its envelope. The detector is sandwiched between two cards. Remove one card such that the detector lays strip-side down on one of the cards.
  2. Search for any signs of silicon debris in the detector envelope or within the cards. If debris is present, be sure to remove it before eventually returning the detector to the envelope, and identify the source of the debris during the visual scans of the detector.
  3. Examine the back surface by eye. Take note of any blemishes or scratches. If there are indications of edge chipping, place the card and detector on the probestation chuck (with the detector still strip-side down on the card) and measure the width of the chipping. Take a picture if appropriate.
  4. Ensure the probestation chuck is completely clean and clear of any debris.
  5. Place the detector directly on to the probestation chuck, with the strip side facing upwards.
  6. Check that the serial number scratched on the identification pads matches the serial number on the detector envelope.
  7. At high magnification, scan along all four edges, searching for edge chipping, scratching or other damage.
  8. With the same high magnification, scan along the bias resistors, searching for breaks, signs of processing defects or non-uniformity.
  9. At lower magnification, scan the full area of the detector, taking note (and taking pictures where appropriate) of blemishes, scratches or other non-standard features.
  10. Save the database file, which should include all comments and pictures taken. The detector should be flagged as having failed if any edge chipping (front or back) exceeds 50um, if there is severe scatching or other gross defects, or there are signs of a processing abnormality. If in doubt, select the detector for a full strip test to confirm any defects electrically.
  11. Raise the chuck and probe the bias rail, and perform an IV scan.
  12. It might be most convenient to perform a CV measurement directly after the IV scan.

3.4.3 Tests on a Detector Subset

For a subset of detectors (~10%), perform the following after the visual scan and IV scan:
  1. Ensure all detector frames are completely clean and clear of debris.
  2. Mount the detector in a frame, and bond the bias rail and edge contact out to suitable connectors.
  3. Place the frame on the probestation chuck and perform the full strip test.
  4. After the full strip test has been performed on 5 detectors or more, start the leakage current stability test on all 5 in parallel by means of the switching matrix. During the 24 hours of the stability test, further full strip tests can be performed on other detectors.
  5. It is recommended to perform the interstrip capacitance and strip metal resistance tests on a smaller subset of detectors (~1%). Do these tests after the leakage current stability test, with the detectors still in the frames.

3.5 Obsolete Tests

The tests listed in this section are redundant, because the information they yield is already obtained more effectively by the full strip test detailed in section 3.2.2. However the test procedures are retained here for reference.
 

3.5.1 Bias Resistance and Interstrip Resistance

Note: the values of the bias resistors are yielded by the Full Strip Test, so this test would not normally be performed.

Aim

Determine the bias resistor value is within specifications and that the interstrip isolation is sufficient when under bias.

Procedure

This test requires a voltage source and a volt source / picoammeter (SMU). This measurement yields both the polysilicon bias resistance and the interstrip resistance. Place the detector backplane on the chuck of a probestation and contact the bias rail and a strip implant by probe needles. The backplane and bias rail should be connected to the high and grounded-low outputs (respectively) of the voltage source. The strip implant and bias rail should be connected to the high and low outputs (respectively) of the SMU. Perform an IV (using the SMU) up to 1V to determine the resistance between the strip implant and bias rail as a function of bias voltage (increase detector bias from 0 V to 5 V in steps of 0.2 V).

Acceptance

Interstrip resistance is sufficient if the measured resistance vs detector bias plateaus. The plateau level resistance is equivalent to the polysilicon bias resistance, and must be within 1.25 +/- 0.75 Mohm.
 

3.5.2 Coupling Capacitance

Note: the coupling capacitance for every strip is yielded by the Full Strip Test, so this test would not normally be performed..

Aim

To determine the coupling capacitance between the strip metal and strip implant, to check that the value is within specification and to monitor processing consistency.

Procedure

This test requires a CV meter. Place the detector backplane on the chuck of a probestation and contact the metal and implant of a strip with probe needles. Connect the strip metal and implant to the AC and voltage outputs (respectively) of the CV meter, with the CV meter sourcing 0V. Measure the capacitance between the metal and implant at 1 kHz with CR in PARALLEL.

Acceptance

Coupling capacitance > 20 pF/cm

3.5.3 Standard Strip Test

Note: the strip integrity is yielded by the Full Strip Test, so this test would not normally be performed.

Aim

Check each strip for pinholes in the oxide, for shorts between strip metals, and for discontinuities in the strip metals as a verification of manufacturer supplied data and to check that the strip defects are within specifications.

Procedure

This test requires a volt source/picoammeter (SMU) to check for oxide pinholes, a CV meter to measure capacitance, and a switching matrix. The detector is placed on the chuck of an automatic probestation, and strip metal pads corresponding to Row C are probed under computer control with the light on. Pinholes in the strip oxide are determined by a measurement of current between the strip metal and backplane with +10V or +100V on the needle and the detector backplane at ground potential. A series resistor of ~10Mohm should be used to limit the current in case of pinholes. The following technique for each strip measurement has been demonstrated to work well without any damage to the detector, and is therefore recommended, though alternative techniques are acceptable:
  1. Switch the probeneedle to the high output of the SMU sourcing 0V, and the backplane to grounded low output of the SMU.
  2. Step to strip n and raise the chuck
  3. Increase the SMU source to +10V, wait 1 second and measure the current to determine electrical continuity across the oxide. If the current exceeds 50nA (which defines the existence of a pinhole at low volts), skip steps 4 and 5 and go to step 6.
  4. If the measured current is less than 50nA, increase the SMU source to +100V (no ramp), wait 1 second and recheck the current.
  5. Decrease the SMU source to 0V (no ramp).
  6. Switch the probeneedle to ground (ie short the needle to the detector backplane) and wait for 500ms
  7. Switch the probeneedle to the AC output of the CV meter, and the backplane to the voltage source of the CV meter (with the CV meter sourcing 0V).
  8. Wait 1 second and measure the capacitance (at 1kHz, with CR modelled in SERIES)
  9. Lower the chuck
  10. Repeat the measurement cycle from point 1 above for strip n+1.
The test (as demonstrated on a SUMMIT 10K probestation) takes about 1 hour 10 minutes.

Detector Acceptance

1. We require <2 % defective strips, where a defective strip is defined by either of the following: 2. We require that the total number of PINHOLES, OXIDE-PUNCHTHROUGHS, SHORTS and OPENS differently identified by the institute and manufacturer is less than 3.

Batch Acceptance

The batch is accepted if the mean number of good strips is >99% and no detector falls below 98% good strips.

4.0 Equipment Required at ATLAS Institutes

A list of equipment required at ATLAS institutes for production testing is shown below. Recommendations are given for equipment, but alternative equipment is acceptable if the measurement specs are comparable.

4.1 Automatic (computer controlled) probestation

eg Wentworth AWP-1050/1080, Summit 10K, Alessi 6100 etc

Requirement

For all probestation requirements. A computer controlled high precision probestation is an absolute requirement for strip integrity tests.

4.2 High Magnification Optics with Video Capture Card or Digital Camera

eg Leica Microzoom II, up to x500

Requirement

For the visual scans. It is essential to be able to observe individual strip defects, such as implant breaks. A video capture card (or high resolution digital camera) is necessary to save images of defects.

4.3 Voltage source

eg Keithley 487, Keithley 6517

Requirement

For IV, CV, strip integrity, stability and general tests. Require capability of 500V or more, both polarities, compliance up to at least 1mA. Many of these tests are anticipated to take place in parallel, so at least two voltage sources are recommended.

4.4 Picoammeter

eg Keithley 487, Keithley 6517

Requirement

For IV, stability, strip integrity and general tests. Require sensitivity of 1nA (minimum) to at least 1mA. Many tests will be carried out in parallel, so at least two picoammeters are recommended.

4.5 LCR meter

eg HP4263B, Wayne Kerr 6425

Requirement

For strip integrity, depletion, interstrip capacitance, coupling capacitance, flatband voltage tests. Frequency requirement from 100Hz to 100kHz or higher. The LCR meter must have an external bias adapter for applying bias voltages up to 400V.

4.6 Ohmmeter

eg Keithley 2000/2001

Requirement

For strip metal resistance and sheet implant resistance measurements. Note these parameters can also be measured from IV characteristics using the voltmeter/picoammeter, so this option is not absolutely necessary.

4.7 Temperature/Humidity Monitor

eg dedicated monitors, or Keithley 2000/2001 equipped with Pt100/thermocouple, humidity probe etc

Requirement

Temperature and humidity monitoring during IV and stability measurements.

4.8 Switching matrix

eg Pickering 20-360, Keithley range etc

Requirement

For strip integrity tests and stability measurements.

4.9 Bonding machine

eg K&S manual or automatic

Requirement

For bonding detectors in frames for the purpose of the full strip test and long term stability test.

4.10 Environment chamber

eg Commercial or "home-made"

Requirement

To provide a stable dark environment during stability tests. Requires a dry air (nitrogen) purge system and temperature control and/or monitoring.

4.11 Digital Micrometer

Requirement

To measure the thickness of a wafer.

4.12 Networked PC with GPIB card and appropriate LabView control software and database software

Requirement

For all data-taking and updates to the ATLAS database. Note that database updates are also possible via the Geneva web interface.

5.0 Database Entries

5.1 Manufacturer Data

The manufacturer will ideally register the detector into the database, and upload all the manufacturer test data into the database before dispatch to the institute. The manufacturer will also register the shipment of the detectors into the database. Where this is not possible, information from the manufacturer will ideally be provided on a PC-formatted disk to a pre-agreed format for uploading into the database by ATLAS. As a last resort, printed data will be provided by the manufacturer and entered into the database by hand at the ATLAS institute. Details of the data entered by the manufacturer can be found from the SCT Database Web Page[3].

5.2 Data from ATLAS Institutes

Test programs at the ATLAS institutes will automatically generate database files at the end of each measurement, and the database files must be uploaded periodically into the database via either the java UploadTestData program or by OMNIS. The format of the database files for each measurement, and the data entries expected for each detector are summarised on the SCT Database Web Page[3].

References

[1] See the row definitions in the detector engineering drawings:
 http://hepwww.ph.qmw.ac.uk/~beck/detdrgs.html
[2] Manufacturer's SCT database user guide:
 http://melb.unige.ch:3143/phyprdwww/sctprd/doc/userguide/mfr/welcome.html
[3] SCT database - see details of java applications
 http://melb.unige.ch:3143/phyprdwww/sctprd/welcome.html

Last modified: Thu Nov 30 11:20:05 MET